发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the variation of Zener voltage on breakdown by coating a P-N junction with a metallic wire for a cathode electrode. CONSTITUTION:A P-N junction is formed so as to be coated with a metallic wiring 19. When a Zener diode is used for a constant voltage circuit, a metallic wiring 18 for an anode electrode is given - potential and the metallic wiring 19 for a cathode electrode + potential. The metallic wiring 19 for the cathode electrode is given + potential, thus inhibiting an injection to an oxide film 15 of hot holes on breakdown, then reducing the variation of Zener voltage. Even when a film easy to be charged at - charges is shaped onto the oxide film 19, the injection of hot holes to the oxide film 15 can be suppressed. Accordingly, the fluctuation of Zener voltage can be eliminated on breakdown.
申请公布号 JPS61226971(A) 申请公布日期 1986.10.08
申请号 JP19850067050 申请日期 1985.03.30
申请人 TOSHIBA CORP 发明人 HATA SEIJI
分类号 H01L29/866 主分类号 H01L29/866
代理机构 代理人
主权项
地址