| 摘要 |
PURPOSE:To reduce the damage of an silicon crystal, and to prevent the extension of an element region by separating a semiconductor layer into two in the vicinity of a central section in the direction of extension of laminated structure and forming a collector, an emitter region and a base region as a projecting section. CONSTITUTION:A semiconductor layer 12 and a mask 13 for etching are formed on a P type silicon single crystal semiconductor substrate 11, and an silicon oxide film 15 shaped on the whole surface is left only on the exposed surface of the substrate 11. A semiconductor layer 17 is shaped and a polycrystalline silicon layer 18 is formed on the silicon oxide film 15, and laminated structure 19 is constituted on the original substrate 11. The P type semiconductor layer 17 is isolated into 17A and 17B by repeating anisotropic etching twice, and laminated structure 19 is changed into a PNP transistor using one 17A as a collector region, the other 17B as an emitter region and an N type projecting section 14 as a base region. A process for impurity diffusion and heat treatment are removed and an silicon crystal is not damaged, thus largely improving yield. |
