| 摘要 |
<p>A memory cell array consists of a plurality of memory sections (11). A pair of bit lines (BL,BL) are provided for each column. Word lines (WL) are provided each for each row in each memory section (11). One end of the current path of a first transistor (83, 89) is connected to the corresponding bit line. The other end of the current path of the first transistor is applied with a predetermined voltage (VDD). One end of the current path of a second transistor (81, 87) is connected to the corresponding bit line. The other end of the current path of the first transistor is applied with the predetermined voltage (VDD). The current feed ability of the first transistor (83, 89) is larger than that of the second transistor (81, 87). After an address signal varies and the predetermined period elapses, the first transistor (83, 89) in the selected section (11) turns on, the second transistor in the selected section (11) turns off, the first transistor (83, 89) in the nonselected section (11) turns off, and the second transistors (81, 87). turns on in the nonselected section (11). The bit lines (BL, BL) in the selected section (11) are charged for a predetermined period of time after the address signal change, to pull up the voltages of the bit lines in the nonselected section to a power voltage. A row decoder (13) renders active in level the word line (WL) after the first transistor (83, 89) connected to the bit lines of the selected section (11) is turned off according to an address signal.</p> |
