| 摘要 |
<p>A process for thermally etching a CaAs substrate prior to molecular beam epitaxy comprises the steps of: heating the GaAs substrate to above 750 DEG C.- at which temperature both Ga and As are evaporated from the GaAs substrate- whilst irradiating it with an As molecular beam, thereby removing contamination adhering to the surface of the GaAs substrate. As the substrate evaporates it carries with it the contamination. The process can be performed by an apparatus comprising a prechamber (2), in which the surface is evaporated, connected to a growth chamber (6), in which an epitaxial layer is grown.</p> |
