| 摘要 |
<p>In a method for fabricating a bipolar transistor a base electrode (9a) of metal silicide is formed being separated from an emitter region (7) only by the thickness of a double-layered insulator film (109, 203). The interfaces between the base (61) and emitter (7) regions and between the base (61) and base electrode (9a) lie in the same plane. The emitter region (7) is formed in a mesa by diffusion of impurity from an overlying doped polysilicon layer (603). <IMAGE></p> |
