| 摘要 |
PURPOSE:To improve reproducibility by forming a silicon nitride film to sections except a forming position for an optical waveguide for a resonator on a semiconductor substrate, growing a compound semiconductor layer and growing a polycrystalline semiconductor layer on silicon nitride and a single crystal semiconductor layer in an exposed section of the semiconductor substrate. CONSTITUTION:An N<+>-GaAs buffer layer 2, an N-AlGaAs clad layer 3, a quantum well active layer 4 and P-AlGaAs are formed onto a semi-insulating GaAs substrate 1 in succession through a MBE method. An Si3N4 film 6 is shaped, an opening 7 is shaped through photolithography, and P-AlGaAs is grown by using the MBE method. A growth layer is changed into a polycrystal on Si3N4 6 and a P-AlGaAs polycrystal 8 is formed, and P-AlGaAs 10 consisting of a single crystal is grown in an exposed section of the crystal plane of the opening 7. A P<+>-GaAs polycrystal 9 and a single crystal 11 are formed for a contact, and an electrode metal 12 being in ohmic-contact with P<+>-GaAs 11 is shaped, thus acquiring element-section structure. Accordingly, a semiconductor laser at a single transverse mode having a low threshold and high efficiency can be shaped with excellent reproducibility and yield.
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