| 摘要 |
A semiconductor memory device comprises word lines connected to a row of memory cells, pairs of bit lines each connected to a different column of memory cells, word line drive means for driving the word line, and data sensing means. The word line drive means drives a selected word line only during a predetermined time duration which is shorter than the time duration of a word selection signal. The data sensing means includes a differential amplifier including a pair of bipolar transistors connected at their base electrodes to a pair of bit lines. Within the predetermined shorter time period, the differential amplifier senses the data stored in a selected memory cell and that sensed data is latched by a latching circuit.
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