| 摘要 |
PURPOSE:To form a large capacity in a small area without increasing the number of mask matching steps by collectively electrically connecting only the electrode layers of even- and odd-numbered of capacitors of laminated structure, respectively. CONSTITUTION:An oxide film 2 is formed on a semiconductor substrate 1. The first and second capacitor electrodes are alternately laminated through dielectric films in the order of dielectric film 3, the first capacitor electrode 4, dielectric film 8 and the second capacitor electrode 9 to form an accumulated layer. The materials of the electrodes even- and odd-numbered are different. Then, the first capacitor electrode layer is preferentially etched to move backward the electrode layers 4, 11, 15 slightly inside. The exposed entire surface is formed with an insulating layer 19. Then, the layer 19 is partly removed to form a conductor layer 20. Thus, the second capacitor electrodes 9, 13, 17 are electrically connected. |
