| 摘要 |
Substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a mixture gas containing at least a semiconductor material gas and a carrier gas is introduced into the reaction chamber in such a state in which a gas in the reaction chamber is exhausted therefrom. An electromagnetic field is applied to the mixture gas to ionize it into a mixture gas plasma in the reaction chamber, by which a semiconductor material is deposited on each substrate. In this case, the semiconductor material thus deposited on each substrate becomes a non-crystalline semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than a temperature at which the semiconductor material on the substrate becomes crystallized. The reaction chamber is provided with a gas ionizing region on the side of the gas inlet and a semiconductor depositing region on the side of the gas outlet. In the gas ionizing region, the mixture gas is ionized by a high-frequency electromagnetic field having a high alternating frequency. The mixture gas plasma thus formed in the gas ionizing region is passed into the semiconductor depositing region, in which the substrates are each placed and deposited with the non-crystalline semiconductor layer.
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