| 摘要 |
PURPOSE:To obtain high output characteristic by forming an ohmic contacting layer compounded with nickel with the second electrode side boundary of the amorphous semiconductor layer of a photovoltaic device, thereby reducing an internal resistance. CONSTITUTION:The first transparent electrodes 12, 22, 32 formed of tin oxide, indium are formed on a light transmission substrate 1. GD-aSi layers 17, 27, 37 generate photocarriers which contribute to generation by light emission. Ohmic contacting layers 15, 25, 35 are formed by depositing nickel on the layers 17, 27, 37. The second electrodes 16, 26, 36 are formed on ohmic contacting layers 15, 25, 35. The first electrodes 12, 22, 32 and the second electrodes 16, 26, 36 of the first-third generating zones 10, 20, 30 have extensions 18, 28, 38 and 19, 29 out of generating zones 10, 20, 30, and the extensions of the electrodes are superposed and electrically connected. |
