| 摘要 |
Thermal processing of selected areas of a workpiece, such as a semiconductor device, is implemented without a photolithographic masking step. This is achieved through the use of a pulse-mode source of heat energy, such as a laser or a particle beam source, the heat radiation of which is applied in blanket fashion to a workpiece. Selective heating of workpiece areas to be thermally processed is attained through appropriate selection of energy, pulse duration, and pulse interval operating parameters of the heat source. Specifically, the appropriate selection of heat energy defines which areas of a workpiece are to be selectively heated, while the appropriate selection of heat energy pulse duration and heat energy pulse interval minimizes stray heat transfer to non-selected areas of the workpiece.
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