发明名称 |
Integrated circuit with improved programmable read-only memory |
摘要 |
Field effect transistors having a short channel length are desirable for carrying out logic operations at a high speed. However, they are then not capable of withstanding the comparatively high programming and erasing voltage at which an (E)EPROM has to be operated. During the programming cycle the field effect transistors are kept in the current-nonconducting state, while recording the logic information obtained by the logic operations, the "fast" transistors are nevertheless capable of withstanding the comparatively high voltage.
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申请公布号 |
US4616339(A) |
申请公布日期 |
1986.10.07 |
申请号 |
US19840618006 |
申请日期 |
1984.06.06 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
CUPPENS, ROGER;HARTGRING, CORNELIS D. |
分类号 |
G11C17/00;G11C16/06;G11C16/12;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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