发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to apply a high voltage to an input terminal by applying a voltage divided by a resistor or a transistor from the input terminal of an integrated circuit to an input gate. CONSTITUTION:The input terminal 1 of an integrated circuit is grounded through voltage dividing resistors R1, R2, and the intermediate point M is connected to the input terminal of an MOS inverter 2 of the integrated circuit. If R1, R2 are set so that 'H' level applied to the inverter 2 comes to VDD, where a power source voltage of the circuit is VDD, an input voltage is Vin, and resistances are R1, R2, when the input is fluctuated at 0-Vin, the level of the M point is fluctuated between 0 and the VDD, and the inverter 2 becomes similar to the normal operation, and even if a high voltage is applied to the input, it can be operated.
申请公布号 JPS61225850(A) 申请公布日期 1986.10.07
申请号 JP19850066827 申请日期 1985.03.30
申请人 TOSHIBA CORP 发明人 OOYA TAKAYOSHI
分类号 H01L27/04;H01L21/822;H01L27/02 主分类号 H01L27/04
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