发明名称 Projection exposure apparatus
摘要 A projection exposure apparatus for projecting, onto a semiconductor wafer through a projection lens, an integrated circuit pattern formed on a mask or reticle. An alignment beam having a wavelength different from that for the exposure is used to achieve alignment between the mask and the wafer. A parallel flat plate is detachably disposed between the projection lens and the mask and/or the wafer to prevent a magnification error and/or a focus error of the projection lens which would otherwise be caused upon alignment due to the difference in wavelength.
申请公布号 US4616130(A) 申请公布日期 1986.10.07
申请号 US19850722015 申请日期 1985.04.11
申请人 CANON KABUSHIKI KAISHA 发明人 OMATA, TAKASHI
分类号 H01L21/30;G03F7/20;G03F9/00;H01L21/027;(IPC1-7):G01J1/20;H01J3/14;H01J40/14 主分类号 H01L21/30
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