发明名称 |
Silicon cap for annealing gallium arsenide |
摘要 |
A method of manufacturing GaAs semiconductor devices includes the steps of emplacing doping impurities by ion implantation on at least one surface of a GaAs substrate, and a step of annealing to remove damage resulting from the implantation of the impurities in the GaAs material. Prior to the annealing, a silicon capping layer is deposited on the surface by either sputtering, evaporation, or vapor deposition to a thickness of 100-10,000 angstroms. Subsequent to the annealing, the silicon capping layer is removed by etching. The silicon cap prevents out-diffusion of arsenic from the GaAs, and has a coefficient of thermal expansion which is sufficiently close to that of the GaAs to inhibit the formation of cracks in the capping layer.
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申请公布号 |
US4615766(A) |
申请公布日期 |
1986.10.07 |
申请号 |
US19850705959 |
申请日期 |
1985.02.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JACKSON, THOMAS N.;PEPPER, GWEN;RUTZ, RICHARD F. |
分类号 |
H01L21/265;H01L21/314;H01L21/324;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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