| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF |
| 摘要 |
PURPOSE:To obtain a MOS transistor having LDD structure of slight dispersion in characteristics by forming an oxide film on the side wall of the gate electrode CONSTITUTION:An oxide film12, 13 is formed on a silicon substrate 11, which is then implanted with boron ions; deposited with polysilicon film over its whole.
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| 申请公布号 |
JPS61224459(A) |
申请公布日期 |
1986.10.06 |
| 申请号 |
JP19850065428 |
申请日期 |
1985.03.29 |
| 申请人 |
TOSHIBA CORP |
发明人 |
AOKI RIICHIRO;OKUMURA KATSUYA |
| 分类号 |
H01L29/94;H01L21/265;H01L21/321;H01L21/336;H01L29/49;H01L29/78 |
主分类号 |
H01L29/94 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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