| 摘要 |
PURPOSE:To obtain the desired thin film at a low temperature and a high speed by a method wherein, when raw gas and hydrogen gas are fed into the reaction chamber in which a semiconductor substrate is arranged and a thin film is grown on the substrate, hydrogen gas is brought into a plasmic state and a hydrogen atom is grown immediately before introduction, and also the light of the prescribed wavelength is made to irradiate in the reaction chamber on the row gas having a light absorbing property. CONSTITUTION:A stage 5, wherein a heater is built-in, is arranged in a reaction chamber 2, the Si substrate 4 on which a thin film is formed is placed on said stage 5, halogenated metal gas is fed into the chamber 2 from a cylinder 6 through the intermediary of a flow rate regulating device 8, and also hydrogen gas is fed from a cylinder 7 through the intermediary of the flow rate regulating device 8 in the same manner as above. Through these procedures, after a thin film is grown on a substrate 4, exhaust gas is sucked into a vacuum exhaust device through the intermediary of an exhaust valve 10. At this time, the following means is added to the vacuum exhaust device. To be more precise, means is added to the vacuum exhaust device. To be more precise, hydrogen gas is converted to a hydrogen atom directly before the chamber 2 using a discharge pipe 9, and the laser beam 12 sent from the source of laser beam 1 is made to irradiate on the metal gas through a window 3. |
