| 摘要 |
PURPOSE:To form a growing film with excellent crystallizing property by a method wherein a semiconductor device comprising Zn containing N<->type, P<-> type or high resistant II-VI group compound semiconductor and mixed crystal thin film made of these materials is produced by making R2Zn and R2S containing excessive low boiling point constituent react to each other for matur ing to remove the excessive constituent as well as using the resultant organic Zn compound as source. CONSTITUTION:R2Zn and R2S containing excessive low boiling point constituent with 1.1-1.2% of equivalent ratio between low boiling point constituent and high boiling point constituent are mixed with each other to make them react throughly to each other for around 2 hours at 10-35 deg.C/hour not exceeding the boiling point of low boiling point constituent. Next the temperature is raised up to 30-70 deg.C at the ratio of 10-15 deg.C/hour to complete the reaction and then the constituents are matured for 30-60 minutes as they are, finally removing any excessive constituent by distillation. Through these procedures, the lumines cent efficiency of blue light luminescent element in the MIS structure can be improved by one figure from normal 10<-4> to around 10<-3> attaining to the electro- luminescence with around 585 mum of luminescent wavelength. |
