| 发明名称 |
MANUFACTURE OF THIN FILM TRANSISTOR AND MANUFACTURING EQUIPMENT |
| 摘要 |
PURPOSE:To otain a transistor of high speed operation by greatly reducing base resistance by laminating multilayer reverse conducting type thin films CONSTITUTION:A lean Si substrate 21 is introduced in n MBE equipment, an (n) layer 1mum thick is made by supplying Sb of concentration 10<16>/cm<3> with. |
| 申请公布号 |
JPS61224365(A) |
申请公布日期 |
1986.10.06 |
| 申请号 |
JP19850063431 |
申请日期 |
1985.03.29 |
| 申请人 |
AGENCY OF IND SCIENCE & TECHNOL |
发明人 |
SHIRAKI YASUHIRO;NAKAGAWA KIYOKAZU;MURAYAMA YOSHIMASA |
| 分类号 |
H01L29/80;H01L21/331;H01L29/10;H01L29/167;H01L29/68;H01L29/73;H01L29/737 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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