| 摘要 |
PURPOSE:To equalize the etching speed over a substrate by a method wherein, when the substrate to be processed is mounted on a specimen electrode out of the speciment electrode and an opposing electrode arranged in a processing chamber to etch the substrate with plasma, a cylindrical tube is provided opposing to a gas feeding channel piercing through the opposing electrode on the central part of the backside of opposing electrode. CONSTITUTION:An opposing electrode 11 pierced with a vertical gas feeding channel 15 and a specimen electrode 12 loaded with a specimen (substrate) 30 to be etched are arranged at a specified interval within a processing chamber 10 with an exhaust port 17 while glow discharge is performed between the electrode 12 connected to a high frequency power supply 16 and the other ground electrode 11 to etch th surface of substrate 30. In such a constitution, a cylindrical tube 21 communicated with the gas feeding channel 15 is fixed in protruded manner to the central part only on the backside of flat plate type electrode 11 to fill the tube 21 with porous material 22 for diffusing etching gas passing through the porous material 22 over the surface of substrate 30. Through these procedures, the etching speed on the central part of substrate 30 normally decelerated can be compensated to equalize the inner surface speed distribution. |
