| 摘要 |
PURPOSE:To obtain a highly reliable IC device by a method wherein a resistance film is formed on the final insulating film formed on the mutually isolated single crystal Si islands and the Si islands are connected with the polycrystalline Si substrate at the connecting parts. CONSTITUTION:Numerous n-type single crystal islands 3, which are mutually isolated by SiO2 films 2, are formed in a polycrystalline Si substrate 1. N<+> layers 4, a p-type emitter 5, an n<+>emitter 6, a p-type base 7, a p-type resistance layer 8, an anode electrode 9 to be coupled with the p-type emitter 5, a cathode electrode 10 to be coupled with the n<+> emitter 6, a gate electrode 11 to be coupled with the p-type base 7, electrodes 12 and 13 to be coupled with the p-type resistance layer 8 and insulating film 14 and 15 are respectively formed as prescribed, the insulating film 15 is covered with a polycrystalline Si resistance film 16 and the single crytal islands are connected with the polycrystalline Si substrate 1 at connecting parts 17. In this constitution, when the substrate 1 is earthed, each island 3 is surrounded with the earth potential in a three-dimensional manner and is shielded from the external atmosphere, and moreover, the intrusion of water content and Na ions into the islands from the extermal atmosphere is also prevented. As a result, the highly reliable device can be obtained. |
