| 摘要 |
PURPOSE:To facilitate the manufacturing step and to mass-produce by forming an insulating layer on an optical stopping film contacting with a liquid crystal cell, with an oxidation. CONSTITUTION:The thin film transistor TFT and the display picture element electrode 7 are arranged on the substrate 1 in a matrix state to form the first electrode substrate and the insulating film 8 is coated on the first electrode substrate, and then a metal such as a aluminium is vapor-deposited and is etched to a pattern so as to cover an upper part of TFT, to form the optical stopping film 9 contacting with the liquid crystal 13. The formation of the insulting layer on the optical stopping film 9 is performed by the oxidative treatment according to the anodic oxidation resulting in the formation of the oxidation film 10. Accordingly, the method as mentioned above, makes the step very easy and improves the mass production, on comparing with the earlier method in which the insulating layer is formed with the vapor-deposition or the sputtering method. |
