| 摘要 |
The invention provides integrated circuit memories with repair circuits. These repair circuits allow redundant memory cell lines to be substituted for defective cell lines. The invention takes advantage of the existence of these substitution circuits for electrically, and no longer only functionally, decoupling the defective lines. A connection connects circuits for biasing the cell lines to the repair circuit of this line. When the line is repaired (i.e. neutralized) it is automatically unbiased. |
