| 摘要 |
PURPOSE:To obtain a semiconductor device, characterized by excellent cooling efficiency, easy control of temperature and implementation of a compact size, by forming an electronic cooling part by using P-type and N-type regions and metal, which connects said regions, as a unitary body on a semiconductor substrate, on which electronic elements are formed. CONSTITUTION:On the main surface of a GaAs substrate, e.g., a source 6, a drain 7 and a gate 8 provided, and an FET is formed by an ordinary region constitution in the GaAs substrate 5. On the other surface of the GaAs substrate 5, a metal thin film 9 is provided by evaporating Al and the like. An N-type Bi2Te3 layer 10 and a P-type Bi2Te3 layer 11 are formed by sputtering. Al electrodes 12 and 13 are formed on the respective layers. An insulating film 4 is formed on one electrode 12, and heating and cooling part is constituted. The FET is formed for output or for small signal use. When a voltage is applied across the electrodes 12 and 13, the Al thin film 9 can be cooled or heated. As a result, the FET formed in the same GaAs substrate 5 can be cooled. |
