| 摘要 |
PURPOSE:To simplify the manufacturing process and to enable an interlayer insulation film to be sufficiently flattened, by providing an insulation layer, a first wiring layer, a second insulation layer and a photoresist layer, forming an opening in a part of the photoresist layer, and etching the whole surface thereof for removing the photoresist and the second insulation layer simultaneously so that the first wiring layer is exposed in a part of the second insulation layer. CONSTITUTION:A first wiring layer 3 is formed on one surface of a semiconductor substrate 1 through an insulation layer 2. An interlayer insulation film (second insulation layer) 4 is formed so as to cover the first wiring layer 3. A photoresist layer 5 which is to act also as a flattening material is applied on the interlayer insulation film 4 so as to have a thickness smaller than that of the film 4. The part of the photoresist 5a opposing to a part of the first wiring layer 3 through the interlayer insulation film 4 is removed by etching so that a contact hole pattern is formed in the photoresist. The structure is etched back by means of the reactive ion etching process using O2 gas as indicated by the arrows Y, so that the photoresist layer 5 is removed and, simultaneously therewith, a contact hole X is formed in the interlayer insulation film 4. An Al second wiring layer 6 is provided so as to be connected to the first wiring layer 3 through the contact hole X as well as to cover the interlayer insulation film 4. |
