发明名称 VAPOR PHASE GROWTH DEVICE
摘要 PURPOSE:To obtain uniform film thickness and film quality on the surface of a substrate by sloping the supply hole side and discharge hole side of a susceptor holder and bringing the upper surface section of the susceptor holder, to which a housing recessed section for a susceptor is formed, and the height of the upper surface section of the susceptor to the same level. CONSTITUTION:The upper surfaces of a susceptor 13 and a susceptor holder 11 are formed in the same surface under the state in which the rectangular susceptor 13 on which substrates 12 are placed is housed in a recessed section shaped to the susceptor holder 11 manufactured by the quality of a material different from the susceptor 13. Inclinations 15, 16 are formed on the upstream side and downstream side of a reaction gas flow in the susceptor holder 11, thus smoothing the flow of a reaction gas. Accordingly, grown film thickness having excellent uniformity is shaped onto the substrate 12.
申请公布号 JPS61222123(A) 申请公布日期 1986.10.02
申请号 JP19850064648 申请日期 1985.03.27
申请人 FUJITSU LTD 发明人 IKEDA KAZUTO;YAMAWAKI HIDEKI;IHARA MASARU
分类号 H01L21/205;H01L21/31 主分类号 H01L21/205
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