| 摘要 |
PURPOSE:To reduce residual thermal strain in a semiconductor element after brazing by containing 1-20wt% Ag and bringing oxygen content as an unavoidable impurity to 20ppm or less and the whole content of the unavoidable impurity to 50ppm or less. CONSTITUTION:An In alloy solder material has high creep deformability by bringing the content of Ag to 1-20wt%, the content of oxygen as an unavoidable impurity to 20ppm or less and the whole content of the unavoidable impurity to 50ppm or less. Accordingly, large differential thermal expansion between a semiconductor element and a lead frame generated on brazing on the assembly of a semiconductor device is absorbed sufficiently, thus remarkably reducing residual thermal strain in the semiconductor element after brazing. |
