| 摘要 |
PURPOSE:To execute growth at a low cell temperature without reducing the growing speed, by employing a plural of cells for a molecular beam of at least one of elements constituting compound semiconductor. CONSTITUTION:A plural of cells are employed for a molecular beam of at least one of elements constituting compound semiconductor. For example, an MBE apparatus which has several Ga cells 2 and several As cells 3 in a growth chamber evacuated into very high vacuum ( -10<10> Torr) and which has an introducing inlet 4 for H2 gas, is employed. Under a condition in which H2 gas with about (2-5)X10<-7> Torr is being introduced preliminarily in the growth chamber 1, heating every cell 2, 3 results in Ga and As molecular beams, which are bumped to a substrate 5 being heated preliminarily to a given temperature, thus to epitaxial-grow GaAs. |
