| 摘要 |
PURPOSE:To prevent the deterioration in characteristics due to a short channel effect by forming a buried layer having a conduction type different from an operating layer on the drain side just under the operating layer. CONSTITUTION:An operating layer 2 is shaped onto a semiconductor substrate 1, a stopping film 8 for ion implantation is formed onto the operating layer 2, and a high dose layer 3 having the same conduction type as the operating layer 2 is shaped through ion implantation while using the stopping film 8 as a mask. An insulating film 9 is formed onto the high dose layer 3 and the stopping film 8, the stopping film 8 is lifted off, and a buried layer 7 having a conduction type different from the operating layer is shaped on the drain side just under the operating layer 2 through ion implantation from the direction of the arrow (a) while employing the insulating layer 9 as a mask. the whole is annealed, parts of the insulating film 9 is removed by using a normal photolithography technique, and ohmic electrodes corresponding to a source electrode 4 and a drain electrode 6 are formed to removed sections. Lastly, a gate electrode 5 is shaped by employing a normal photolithography method.
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