| 摘要 |
PURPOSE:To prevent the impressing of high voltage impressed on a clear electrode except on a photoelectric conversion region even under the creeping of the clear electrode, by a method wherein the region of photoelectric conversion film is enlarged to over a region area necessary for image pickup, whereas the region of clear electrode is reduced more than the region of photoelectric conversion. CONSTITUTION:A scanned IC substrate chip 12 is provided with a horizontal scanning circuit 13 and a vertical scanning circuit 14, and a photoconductive thin film 15 is formed in the part corresponding to the photoelectric conversion region surrounded thereby, which is then provided with a clear electrode film 16 by lamination. The use as a photoelectric conversion region capable of image pickup in this construction is restricted to the part of the film 15 where voltage is impressed, whereas in the periphery of the photoelectric conversion array the rate of photo incorporation is different from in the center, and the signal becomes ununiform by the difference. Therefore, margins dx and dy should be provided by increasing the region of the clear electrode film 16 by a factor of several picture elements more than in the periphery of picture element electrodes 6' arranged in two dimensions. In such a manner, the leakage of high target voltage to the region of scanning circuits is prevented, thus eliminating the generation of malfunction. |
