| 摘要 |
847,705. Semiconductor devices. SHOCKLEY TRANSISTOR CORPORATION. March 11, 1958 [March 18, 1957], No. 7876/58. Class 37 A semiconductor device comprises a semiconductor body of one conductivity type having a grain boundary along which extends a diffusion produced zone of opposite conductivity type Fig. 1A shows a P-type silicon crystal having a grain boundary 12 produced by growing the crystal from a pair of seed crystals and tilting the crystal lattice 15 produce a bi-crystal with edge dislocations. Donor material is diffused into the surface to produce a layer of N-type material with deeper penetration along the grade boundary as shown in Fig. 1B. A second dispersion treatment utilising a high density of acceptors is then applied so that an outer P-layer is formed which cuts through the N-layer along the grain boundary as shown in Fig. 1C. A masking, etching and cutting treatment is employed to form two junction transistors as shown in Fig. ID, the upper and lower P-layer constituting the bases, and the two N-type regions in each case, the emitter and collector electrodes. The structure may also be used as a field effect transistor, the upper and lower P-type regions constituting the source and drain respectively in each case, and the N-type regions the gates. A modification is described, to provide a field effect transistor with, low drain-gate capacity, in which the first diffusion is applied in two stages to provide first an N- and then an N + region. Fig. 3 shows an alternative arrangement in which an N-type crystal with grain boundary 11 us subjected to diffusion by acceptors and then etched to produce the junction transistor structure shown in Fig. 3C in which the emitter and collector are constituted by the N-type regions on either side of the grain boundary P-type zone. |
