发明名称 |
X-RAY LITHOGRAPHIC MASK |
摘要 |
<p>An improved X-ray lithography mask has been fabricated by forming an X-ray absorbing lithography pattern on a supporting foil of hydrogenated amorphous carbon. The substrate foil is formed by depositing a carbon film in the presence of hydrogen onto a surface having a temperature below 375 DEG C. The hydrogen concentration is maintained sufficiently high that the resulting film has at least one atom percent of hydrogen. A film having about 20 atom percent of hydrogen is preferred. While impurities are permitted, impurities must be maintained at a level such that the optical bandgap of the resulting film is at least one electron volt. A film with an optical bandgap of about 2 electron volts is preferred.</p> |
申请公布号 |
DE3365521(D1) |
申请公布日期 |
1986.10.02 |
申请号 |
DE19833365521 |
申请日期 |
1983.02.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRADY, MICHAEL JOHN;MEYERSON, BERNARD STEELE;WARLAUMONT, JOHN MICHAEL |
分类号 |
C01B33/02;G03F1/22;H01L21/027;(IPC1-7):G03F1/00 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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