| 摘要 |
PURPOSE:To provide a two-dimensional or three-dimentional superlattice semicon ductor which can expect a quantum effect more prominent than a one-dimen tional superlattice semiconductor, by manufacturing than using very minute process and selective epitaxial techniques. CONSTITUTION:A two-dimentional or three-dimentional superlattice semiconductor is manufactured using very minute process and selective epitaxial techniques. For example, on a crystal substrate 1, a first semiconductor layer 2 is epitaxial- grown, on which a second semiconductor layer 3 is epitacial-grown. The first semiconductor layer 2 and second semiconductor layer 3 are laminated alternately and repeatedly into a given number of layers. Next, photo resist 4 is coated on the surface of the formed semiconductor layers, and is exposed through a line or lattice shape mask having utilized laser holography by using very minute process techniques such as X-ray exposure. In this way, by a excellent directional etching method using a mask of developed photo resist of a lattice shape, trenches are digged from the film surface to the substrate interface, providing a two-dimentional superlattice semiconductor. |
