| 摘要 |
PURPOSE:To remove a collector electrode efficiently with high yield and extremely simply by insulating a collector electrode region through ion implantation up to a collector layer, boring a hole up to the surface of a sub-collector through RIE and forming a collector electrode. CONSTITUTION:An N<+> GaAs layer 12 as a sub-collector layer, an N<+> AlGaAs layer 13, an N-GaAs layer 14, a P<+> GaAs layer 15, an N-AlGaAs layer 16, and an N<+> GaAs layer 17 are grown on a semi-insulating GaAs substrate 11 in an epitaxial manner in succession. A mask consisting of SiO2 18 is applied in a predetermined region, an external base 19 is shaped through ion implantation, and a mask is applied in emitter and base regions and an external base in a collector region is insulated through ion implantation. A mask is applied to the whole transistor, the transistor is insulated and isolated through ion implantation, a hole is bored up to a sub-collector through RIE in the collector region, and a section up to the surface is filled with a metallic layer 20 composed of AuGe/Au. Lastly, an emitter electrode 21 is formed by AuGe/Au and a base electrode 22 by Au/AuZn, and alloyed and brought into ohmic-contact, and a wiring 23 is shaped.
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