| 摘要 |
<p>PURPOSE:To enlarge data reading margin by changing load registance of a memory cell and a dummy cell. CONSTITUTION:When memory information of a memory cell 31 is '0', a controlling signal E is made to '0', and an MOS transistor 35 for load in parallel with an MOS transistor 34 for load becomes off, and load resistance of the cell 31 side becomes low. Consequently, input potential to a sense amplifier 33 corresponding to the content of memory of the cell 31 becomes low, and the difference between reference potential through a dummy cell 32 becomes large, and the content of memory of the cell 31 is read out by the differential potential through the sense amplifier 33. On the other hand, when the content of memory of the cell 31 is '1', an MOS transistor 37 for load is made off through a controlling signal W, and reference potential by the cell 32 is lowered by lowering of load resistance, and the difference between memory information and reference potential becomes large. Thus, data reading margin becomes large.</p> |
