| 摘要 |
PURPOSE:To maintain characteristics of a film to be formed, to improve a depositing speed, to simplify the management of film forming conditions and to achieve mass production of the films readily, without using plasma reaction, by introducing precursor and active species into a film forming space through a conveying space, and performing chemical reaction. CONSTITUTION:Precursor, which is used to form a photoelectric conversion layer, and active species, which undergo chemical reaction with said precursor, are introduced in a film forming space 201. At this time, the active species are put into the film forming space 201 through a conveying space (A) 202, which is communicated to the film forming space 201. The precursor is put in the space 201 through a conveying space (B) 205, which is provided in the conveying space 202 and communicated to the film forming space 201. The photoelectric conversion layer is formed by the chemical reaction of these materials. For example, as a raw material gas for the active species, the mixed gas of H2 and B2H9 is introduced through a pipe 212. As a raw material gas for the precursor, the mixed gas of C2F6 and SiF4 is introduced through a pipe 211. A microwave power source 206 is operated and discharge energy is introduced into an activating chamber. Thus a P-type a-SiC(H,F) layer is deposited. By the same way, a non-doped semiconductor layer and an N-type a SeGE:F:H layer are deposited. |
