| 摘要 |
PURPOSE:To prevent an adverse effect on a photoelectric conversion layer approximately in a working process for the photoelectric conversion layer by continuously forming a high resistance layer consisting of the same quality of materials as the quality of materials of the photoelectric conversion layer onto the photoelectric conversion layer. CONSTITUTION:A photoelectric conversion layer 6 composed of a semiconductor material is shaped onto a substrate 5 while a high resistance layer 7 is formed continuously onto the photoelectric conversion layer 6, and the high resistance layer 7 is shaped by the same material as the material for the photoelectric conversion layer 6. The photoelectric conversion layer 6 is processed, according to a pattern to a predetermined shape including the high resistance layer 7, to form an electrode 8. According to such a process, the greater part of the photoelectric conversion layer 6 are not exposed into air, thus inhibiting adsorption to the surface of the photoelectric conversion layer 6 of H2O, N2, O2, etc. The photoelectric conversion layer 6 and the high resistance layer 7 can be shaped without breaking a vacuum through a thin-film forming method, such as a sputtering method, a plasma CVD method, an optical CVD method, etc., thus preventing the further mixing of impurities even in this respect. |
