| 摘要 |
PURPOSE:To increase the speed of plasma treatment, and to enable stable treatment by bringing a sample to negative potential on plasma treatment. CONSTITUTION:A substance such as SF6 is introduced into an ion source 1 as a reaction gas, an electron cyclotron resonance phenomenon is generated by applying constant microwaves and a fixed magnetic field and a high-density plasma flow 2 is generated, voltage within the range of -1--100V is applied, and a sample 3 on a sample base 4 brought to negative potential is etched and processed. Ion energy can be controlled easily only by changing negative potential applied to the sample base 4, and the damage of a device can be controlled in response to a semiconductor element treated by plasma. Accordingly, the speed of treatment is increased to all plasma treatment, such as the formation of a thin-film, surface treatment, such as the oxidization and nitriding of the surface of the sample or the like, thus enabling stable treatment. |
