| 摘要 |
<p>PURPOSE:To make high speed and high noise margin compatible by negative feedback driving the first stage inverter to give it hysteresis characteristic and making hysteresis voltage noise margin. CONSTITUTION:The first stage inverter 7 of a sense amplifier circuit to which information voltage corresponding to presence of a memory cell transistor Q1 is formed of a P type Q4, a N type Q5, an N type Q10, an N type Q11 connected between the Q5 and Q10 and controlled by output of the second stage inverter 5 etc. Due to negative feedback by the Q11, threshold voltage at the time of rising and falling of input voltage becomes different values, i.e. VT3, VT2 respectively, and hysteresis characteristic is added to the inverter 7. The difference of threshold voltage becomes noise margin, and two characteristics, high speed and high noise margin, become compatible.</p> |
