| 摘要 |
PURPOSE:To form a film of the desired thickness on the desires part of a substrate by depositing a metal on the front side of the substrate while irradiating laser beams or light on the rear side of the substrate. CONSTITUTION:A sample 5 having an SiO2 film 6 of about 1,000Angstrom thickness formed on the (100) face of Si 7 is placed in a reaction tube 3, and a gaseous Wf2+H2 mixture is introduced into the tube 3 from a gas introducing system 4 under proper pressure. CO2 laser beams are irradiated on the Si 7 from CO2 laser 1 so that the SiO2 film 6 is heated to about 600 deg.C by regulating the output of the laser 1. The temp. of the film 6 is monitored with a radiation thermometer 8. Thus, W is produced by the decomposition of the WF2, forming a W film on the SiO2 film 6.
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