Schottky-gate field effect transistor and method for its production.

摘要

A Schottky-gate field effect transistor comprises a substrate, an active layer formed in one surface of the substrate, a Schottky gate electrode in the form of an inverted trapezoid on the active layer. A heavily doped region is formed in the one surface of the substrate at each side of the inverted trapezoid Schottky gate electrode separately from the side edge of the bottom of the Schottky gate electrode by a certain distance but in self-alignment with the corresponding side edge of the top of the inverted trapezoid Schottky gate electrode. Source and drain electrodes are respectively formed on the heavily doped regions in ohmic contact thereto in such a manner that the edge of each of the source and drain electrodes close to Schottky gate electrode is in alignment with the corresponding side edge of the top of the inverted-trapezoid gate electrode.