| 摘要 |
PURPOSE:To form a metal film having low carbon content and resistance ratio by mixing gaseous H2S into reaction system, in a method for forming metal film by vapor growth while using organic metal as source gas. CONSTITUTION:Substrate in which mirror surface of Si wafer is oxidized, is mounted on a base 1 in a chamber 6. Cocks 3, 4 are closed and the inside of the chamber 6 is exhausted by system 5, them the base 1 is heated to about 150 deg.C by a heater 7. He as carrier gas is allowed to flow from an introducing hole 8 at about 70 SCCM rate, the cock 3 of a reservoir 2 and the cock 4 are opened. Organic metal gas, e.g. gaseous W(CO)6 and H2S are introduced into the chamber 6 of about 1 SCCM, from the reservoir 2 and the cock 4 respectively. In such a way, W(CO)6 film is formed on a substrate.
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