| 摘要 |
<p>@ A sensing amplifier for a random access memory (10) (RAM) having a first differential amplifying circuit (40) formed of a first pair of transistors (41, 42) having their sources connected together, their gates supplied with differential inputsig- nals, and their drains connected with symmetrical type active loads (44, 45); and a second differential amplifying circuit (50) of a current mirror type formed of a pair of transistors (51, 52) which is connected in series with the first differential amplifying circuit.</p> |
