| 发明名称 |
Compound semiconductor layer having high carrier concentration and method of forming same. |
| 摘要 |
<p>A compound semiconductor layer (GaAs or AlGaAs layer) is grown by an MBE process and is doped by forming dopant (Si or Be) atomic planes. In order to obtain a high carrier (electron or hole) concentration of the layer, atomic plane doping at a sheet dopant concentration of 2 x 10<1><2> cm<-><2> or more is repeated at constant intervals of atomic planes of 6 nm or less.</p> |
| 申请公布号 |
EP0196245(A1) |
申请公布日期 |
1986.10.01 |
| 申请号 |
EP19860400366 |
申请日期 |
1986.02.21 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
SASA, SHIGEHIKO;KONDO, KAZUHIRO;MUTO, SHUNICHI |
| 分类号 |
H01L21/338;H01L29/812;H01L21/18;H01L21/203;H01L29/207;H01L29/36;H01L29/778;H01S5/00;(IPC1-7):H01L29/207 |
主分类号 |
H01L21/338 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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