| 发明名称 |
Method of forming an oxide film on a semiconductor substrate. |
| 摘要 |
A method of producing thin, e.g. 0.8 to 20 nm, oxide films on a silicon substrate includes pulse heating the substrate in an oxidising atmosphere to a peak temperature exceeding 500 DEG C and typically in the range 700 to 1200 DEG C. The oxide film can be used e.g. as a gate dielectric in MOS technology. |
| 申请公布号 |
EP0196155(A2) |
申请公布日期 |
1986.10.01 |
| 申请号 |
EP19860300864 |
申请日期 |
1986.02.10 |
| 申请人 |
STC PLC |
发明人 |
SCOVELL, PETER DENIS;BAKER, ROGER LESLIE |
| 分类号 |
H01L21/263;H01L21/268;H01L21/316;H01L21/324 |
主分类号 |
H01L21/263 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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