| 摘要 |
PURPOSE:To prevent the electrical characteristics of a semiconductor device from being deteriorated, by removing water absorbed in the surface of a semiconductor substrate prior to growing nitride film on the substrate by the low- temperature plasma process for providing protection for the substrate. CONSTITUTION:Prior to the growth of a nitride film 9, a semiconductor substrate is heat-treated for one hour for removing water absorbed in the surface of the substrate. The nitride film 9 is grown to be about 5,000Angstrom thick with SiH4-NH3 gas at 300 deg.C by means of the plasma process. According to this method, a dynamic MOS memory can be contained with a high manufacturing yield and with a high reliability, without deterioration in the holding time, which would be caused according to a conventional method, and without any alteration in characteristics observed in long-term reliability tests. |
