摘要 |
PURPOSE:To reduce the occupying area of a ring-type oscillation circuit so as to reduce the power consumption of the circuit, by connecting the 1st load MOSFET between the 1st common voltage terminal and 1st external power source and the 2nd load MOSFET between the 2nd common voltage terminal and 2nd external power source. CONSTITUTION:At the time when the output of an inverter is inverted from a high- voltage condition to a low-voltage condition, electric charges accumulated in the gate of the next-stage inverter are made to flow to earthing potential 15 through an (n) MOSFET 14. On the contrary, an electric current is made to flow from the 1st external power source to the gate of the next-stage inverter through a (p) MOSFET 12 and electric charges are accumulated at the time when the output of the inverter is inverted from a low-voltage condition to a high-voltage condition. In these two cases, quantities of moving electric charges are reduced when the electric currents are controlled by means of the (n) MOSFET 14 and (p) MOSFET 12 which are respectively loads. Therefore, the time required for moving a prescribed quantity of electric charges becomes longer and circuit movement is delayed and, as a result, oscillation of a prescribed frequency becomes possible. It must be noted that a CMOS inverter is used to the above-mentioned inverters.
|