| 摘要 |
PURPOSE:To improve the switching characteristics while reducing the capacity between gate, source and drain by a method wherein the relative positions of source region and drain region to the gate part are set up without fail. CONSTITUTION:Source region 25 and drain region 26 are selectively formed using the first mask layer 23. Later the source region 25 and the drain region 26 on the first mask layer 23 are etched to narrow the width of these regions 25, 26 on the mask layer 23 from W1 to W2. Then the second mask layer 27 is formed and then the mask layer 23c between the source region 25 and the drain region 26 is removed making use of the difference in the etching capacity between the first and the second mask layers 23 and 27 to form a gate part 31 through the removed part 30. Through these procedures, relative positions of the gate part 31, the source region 25 and the drain region 26 are self- matched with each other. Due to such a selfmatching process, the intervals between gate part 31, source region 25 and drain region 26 can be set up conforming to specified relative positions simultaneously shortening the channel length.
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