| 摘要 |
PURPOSE:To improve film characteristics by plasma containing hydrogen gas in stock gas when decomposing stock gas by a glow discharge under reduced pressure with the stock gas containing silane gas to form a silicon oxide film. CONSTITUTION:An accumulated material 4 to become a primary base is placed on a lower electrode plate 3, and heated by a heater 5 while controlling it. Stock gas 6 is supplied from a bomb for silane gas diluted with hydrogen gas and a bomb for laughing gas through a flow rate regulator to a reaction furnace 1, and injected in a shower state from an injection hole formed at an upper electrode 2. Power is supplied from a high frequency power source 7 to generate a high frequency glow discharge between the electrodes 2 and 3 to form the stock gas in a plasma state, and a silicon oxide film is accumulated on the material 4. The stock gas employs silane gas SiH4 diluted to 1% with hydrogen gas H2 and laughing gas N2O. |
