| 摘要 |
PURPOSE:To completely and rapidly monitor electric characteristics by forming the electrode pad of a gate of source and drain electrode metals on a gate electrode metal. CONSTITUTION:An N-type layer 2 of an operation layer of an FET is selectively formed on a semi-insulating GaAs substrate 1, a gate metal 3 is deposited on the entire surface, and patterned to form the gate electrode 3. Then, after an N<+> type layer 4 is formed, an SiO2 film is adhered to the entire surface as a spacer film. SiO2 of the source and drain electrode region and the gate pad electrode region are removed by etching, and the source and drain electrodes and the gate pad electrode metal 6 are deposited while a photoresist remains. Since the pad electrode is provided on the electrode 3, the contacting resistance of a probe can be reduced to rapidly and completely monitor the characteristics.
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